一、Development of 0.50μm CMOS Integrated Circuits Technology（论文文献综述）
Fengzhou Fang,Nan Zhang,Dongming Guo,Kornel Ehmann,Benny Cheung,Kui Liu,Kazuya Yamamura[1]（2019）在《Towards atomic and close-to-atomic scale manufacturing》文中认为Human beings have witnessed unprecedented developments since the 1760 s using precision tools and manufacturing methods that have led to ever-increasing precision, from millimeter to micrometer, to single nanometer, and to atomic levels. The modes of manufacturing have also advanced from craft-based manufacturing in the Stone, Bronze, and Iron Ages to precisioncontrollable manufacturing using automatic machinery. In the past 30 years, since the invention of the scanning tunneling microscope, humans have become capable of manipulating single atoms, laying the groundwork for the coming era of atomic and close-to-atomic scale manufacturing（ACSM）. Close-to-atomic scale manufacturing includes all necessary steps to convert raw materials, components, or parts into products designed to meet the user’s specifications. The processes involved in ACSM are not only atomically precise but also remove,add, or transform work material at the atomic and close-to-atomic scales. This review discusses the history of the development of ACSM and the current state-of-the-art processes to achieve atomically precise and/or atomic-scale manufacturing. Existing and future applications of ACSM in quantum computing, molecular circuitry, and the life and material sciences are also described. To further develop ACSM, it is critical to understand the underlying mechanisms of atomic-scale and atomically precise manufacturing; develop functional devices, materials, and processes for ACSM; and promote high throughput manufacturing.
Yutaka Nagata,Tetsuo Harada,Takeo Watanabe,Hiroo Kinoshita,Katsumi Midorikawa[2]（2019）在《At wavelength coherent scatterometry microscope using high-order harmonics for EUV mask inspection》文中研究指明In this review, we describe our research on the development of the 13.5 nm coherent microscope using high-order harmonics for the mask inspection of extreme ultraviolet（EUV） lithography.EUV lithography is a game-changing piece of technology for high-volume manufacturing of commercial semiconductors. Many top manufacturers apply EUV technology for fabricating the most critical layers of 7 nm chips. Fabrication and inspection of defect-free masks, however, still remain critical issues in EUV technology. Thus, in our pursuit for a resolution, we have developed the coherent EUV scatterometry microscope（CSM） system with a synchrotron radiation（SR） source to establish the actinic metrology, along with inspection algorithms. The intensity and phase images of patterned EUV masks were reconstructed from diffraction patterns using ptychography algorithms. To expedite the practical application of the CSM, we have also developed a standalone CSM, based on high-order harmonic generation, as an alternative to the SR-CSM. Since the application of a coherent 13.5 nm harmonic enabled the production of a high contrast diffraction pattern, diffraction patterns of sub-100 ns size defects in a 2 D periodic pattern mask could be observed. Reconstruction of intensity and phase images from diffraction patterns were also performed for a periodic line-and-space structure, an aperiodic angle edge structure, as well as a cross pattern in an EUV mask.
王姗姗,吴倩楠,高跃升,余建刚,曹钎龙,韩路路,李孟委[3]（2021）在《A novel multifunctional electronic calibration kit integrated by MEMS SPDT switches》文中提出Design and simulation results of a novel multifunctional electronic calibration kit based on microelectromechanical system （MEMS） single-pole double-throw （SPDT） switches are presented in this paper.The short-open-load-through（SOLT） calibration states can be completed simultaneously by using the MEMS electronic calibration,and the electronic calibrator can be reused 106times.The simulation results show that this novel electronic calibration can be used in a frequency range of 0.1 GHz–20 GHz,the return loss is less than 0.18 dB and 0.035 dB in short-circuit and open-circuit states,respectively,and the insertion loss in through （thru） state is less than 0.27 d B.On the other hand,the size of this novel calibration kit is only 6 mm×2.8 mm×0.8 mm.Our results demonstrate that the calibrator with integrated radiofrequency microelectromechanical system （RF MEMS） switches can not only provide reduced size,loss,and calibration cost compared with traditional calibration kit but also improves the calibration accuracy and efficiency.It has great potential applications in millimeter-wave measurement and testing technologies,such as device testing,vector network analyzers,and RF probe stations.
Xiaorui Zhang,Huiping Zhu,Song'ang Peng,Guodong Xiong,Chaoyi Zhu,Xinnan Huang,Shurui Cao,Junjun Zhang,Yunpeng Yan,Yao Yao,Dayong Zhang,Jingyuan Shi,Lei Wang,Bo Li,Zhi Jin[4]（2021）在《Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation》文中研究表明Strong C–C bonds, nanoscale cross-section and low atomic number make single-walled carbon nanotubes（SWCNTs）a potential candidate material for integrated circuits（ICs） applied in outer space. However, very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors（FETs）, which limits further understanding on the mechanisms of radiation effects. Here, SWCNT film-based FETs were fabricated to explore the total ionizing dose（TID）and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1 × 1015 p/cm2. Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer. The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious, which proves that the CNT film is radiation-hardened. Specially, according to the simulation, we found the displacement damage caused by protons is different in the source/drain contact area and channel area, leading to varying degrees of change for the contact resistance and sheet resistance. Having analyzed the simulation results and electrical measurements, we explained the low-energy proton irradiation mechanism of the CNT FETs, which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.
Guoliang Chen,Yaming Wang,Jun Qiu,Jianyun Cao,Yongchun Zou,Shuqi Wang,Jiahu Ouyang,Dechang Jia,Yu Zhou[5]（2021）在《A visibly transparent radiative cooling film with self-cleaning function produced by solution processing》文中指出Daylighting structures,including solar cells and building windows,utilize sunlight whilst suffering from undesired solar heat and outdoor dust contamination.A radiative cooling system that is transparent to sunlight and has a superhydrophobic surface would cool and clean the daylighting structures in a sustainable manner.However,the majority of the current daytime radiative cooling systems were designed to fully reflect the incident sunlight to maximize the cooling power.In this work,we optimized both the sunlight transmission and infrared thermal irradiation by modeling the size-dependent scattering and absorption of light by SiO2 spheres embedded in a polymer matrix,we found that the use of nanospheres（20 nm） enabled both high sunlight transmittance（> 90%） and infrared emissivity（-0.85）.This theoretical prediction was confirmed by experimental measurements of a solution-processed nanocomposite film.When coated on a solar cell,the as-prepared film not only preserved the power conversion efficiency of the cell（14.71%,uncoated cell has an efficiency of 14.79%） but also radiatively cooled the cell by up to 5 ℃ under direct sunlight.This reduction of the operating temperature of the solar cell further enhanced its electrical power output,evidenced by an increase in the equilibrium temperature of the LED load by about 14 ℃.The nanoscale textured surface formed by the nanospheres further led to superhydrophobicity and thus excellent self-cleaning performance（efficient removal of dust by wind and/or water droplets）.
Xiuzhu Lin,Fan Li,Yu Bing,Teng Fei,Sen Liu,Hongran Zhao,Tong Zhang[6]（2021）在《Biocompatible Multifunctional E-Skins with Excellent Self-Healing Ability Enabled by Clean and Scalable Fabrication》文中研究表明Electronic skins（e-skins） with an excellent sensing performance have been widely developed over the last few decades.However, wearability, biocompatibility, environmental friendliness and scalability have become new limitations. Self-healing ability can improve the long-term robustness and reliability of e-skins. However,self-healing ability and integration are hardly balanced in classical structures of self-healable devices. Here, cellulose nanofiber/poly（vinyl alcohol）（CNF/PVA）, a biocompatible moisture-inspired self-healable composite, was applied both as the binder in functional layers and the substrate. Various functional layers comprising particular carbon materials and CNF/PVA were patterned on the substrate. A planar structure was beneficial for integration, and the active self-healing ability of the functional layers endowed self-healed e-skins with a higher toughness. Water served as both the only solvent throughout the fabrication process and the trigger of the self-healing process, which avoids the pollution and bioincompatibility caused by the application of noxious additives. Our e-skins could achieve real-time monitoring of whole-body physiological signals and environmental temperature and humidity. Cross-interference between di erent external stimuli was suppressed through reasonable material selection and structural design. Combined with conventional electronics, data could be transmitted to a nearby smartphone for post-processing. This work provides a previously unexplored strategy for multifunctional e-skins with an excellent practicality.
Dongxu LI,Xiaojun ZENG,Zhipeng LI,Zong-Yang SHEN,Hua HAO,Wenqin LUO,Xingcai WANG,Fusheng SONG,Zhumei WANG,Yueming LI[7]（2021）在《Progress and perspectives in dielectric energy storage ceramics》文中研究表明Dielectric ceramic capacitors, with the advantages of high power density, fast charge–discharge capability, excellent fatigue endurance, and good high temperature stability, have been acknowledged to be promising candidates for solid-state pulse power systems. This review investigates the energy storage performances of linear dielectric, relaxor ferroelectric, and antiferroelectric from the viewpoint of chemical modification, macro/microstructural design, and electrical property optimization. Research progress of ceramic bulks and films for Pb-based and/or Pb-free systems is summarized. Finally, we propose the perspectives on the development of energy storage ceramics for pulse power capacitors in the future.
Yu-Dong Li,Qing-Zhu Zhang,Fan-Yu Liu,Zhao-Hao Zhang,Feng-Yuan Zhang,Hong-Bin Zhao,Bo Li,Jiang Yan[8]（2021）在《X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors》文中研究说明The n-type ultrathin fully depleted silicon-on-insulator（FDSOI） metal-oxide-semiconductor field-effect transistors（MOSFETs）,with a Hf0.5Zr0.5O2 high dielectric permittivity（high-k） dielectric as gate insulator,were fabricated.The total ionizing dose effects were investigated,and an X-ray radiation dose up to 1500 krad（Si） was applied for both long-and short-channel devices.The short-channel devices（0.025-0.100 μm） exhibited less irradiation sensitivity compared with the long-channel devices（0.35-16 μm）,leading to a 71% reduction in the irradiation-induced drain current growth and a 26% decrease in the shift of the threshold voltage.It was experimentally demonstrated that the OFF mode is the worst case among the three working conditions（OFF,ON and A110） for short-channel devices.Also,the determined effective electron mobility was enhanced by 38% after X-ray irradiation,attributed to the different compensations for charges triggered by radiation between the highk dielectric and buried oxide.By extracting the carrier mobility,gate length modulation,and source/drain（S/D）parasitic resistance,the degradation mechanism on X-ray irradiation was revealed.Finally,the split capacitance-voltage measurements were used to validate the analysis.
Yuting Zheng,Junjun Wei,Jinlong Liu,Liangxian Chen,Kang An,Xiaotong Zhang,Haitao Ye,Xiaoping Ouyang,Chengming Li[9]（2022）在《Carbon materials:The burgeoning promise in electronics》文中指出Current electronic technology based on silicon is approaching its physical and scientific limits. Carbon-based devices have numerous advantages for next generation electronics （e.g., fast speed, low power consumption and simple process）, that when combined with the unique nature of the versatile allotropes of carbon elements, are creating an electronics revolution. Carbon electronics are greatly advancing with new preparations and sophisticated designs. In this perspective, representatives with various dimensions, e.g., carbon nanotubes, graphene,bulk diamond, and their extraordinary performance, are reviewed. The associated state-of-the-art devices and composite hybrid all-carbon structures are also emphasized to reveal their potential in the electronics field. Advances in commercial production have improved the cost efficiency, material quality, and device design, accelerating the promise of carbon materials.
Chi GU,Jianjuan JIANG,Tiger H.TAO,Xiaoling WEI,Liuyang SUN[10]（2021）在《Long-term flexible penetrating neural interfaces:materials, structures, and implantation》文中指出Penetrating neural interface, which collects the neural electrophysiological signal and serves as a key component in brain-computer interface, has drawn great attention recently. The instability of chronic recording is the main challenge for the conventional neural interface. Novel neural probes with improved long-term performance have been developed based on advanced materials and engineered structures. Here, we review these emergent innovations contributing to chronic stable recording from the perspectives of materials,structures, and implantation methods. These advances make possible further developments in neuroscience research related to neural decoding, neural circuit mechanism analysis, and neurological disease treatment.
二、Development of 0.50μm CMOS Integrated Circuits Technology（论文开题报告）
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三、Development of 0.50μm CMOS Integrated Circuits Technology（论文提纲范文）
（1）Towards atomic and close-to-atomic scale manufacturing（论文提纲范文）
| 1. Introduction |
| 1.1. What is next? |
| 2. Manufacturing approaches for ACSM |
| 2.1. Subtractive manufacturing |
| 2.1.1. Ultraprecision machining |
| 2.1.1. 1. Ultraprecision diamond turning/milling. |
| 2.1.1. 2. Ultraprecision grinding/polishing. |
| 2.1.2. High energy beam machining |
| 2.1.2. 1. Focused ion beam. |
| 2.1.2. 2. Focused electron beam. |
| 2.1.3. Atomic layer etching. |
| 2.1.4. Atomic force microscope nanomachining. |
| 2.2. Additive manufacturing |
| 2.2.1.Atomic layer deposition. |
| 2.2.2. Macromolecular self-assembly. |
| 2.2.2. 1. Protein assembly. |
| 2.2.2. 2. Peptide assembly. |
| 2.2.2. 3. DNA assembly. |
| 2.2.3. Positioning directed assembly. |
| 2.3. Transformation |
| 2.3.1.STM-based methods. |
| 2.3.2. AFM-based methods. |
| 2.3.3.STEM-based methods. |
| 3. Measurement and evaluation |
| 4. Applications |
| 4.1. Quantum computers |
| 4.2. Life sciences |
| 4.3. Ultrahigh-performance materials |
| 4.4. Molecular circuits |
| 4.5. Other applications |
| 5. Conclusion and perspective |
（2）At wavelength coherent scatterometry microscope using high-order harmonics for EUV mask inspection（论文提纲范文）
| 1. Introduction |
| 2. Key technologies of CSM system |
| 2.1. CSM |
| 2.2. CSM equipped with SR |
| 2.3. HHG source |
| 2.4. Image reconstruction from diffraction patterns |
| 3. SR-CSM system |
| 4. HHG-CSM system |
| 4.1. Experimental setup |
| 4.2. Coherence evaluation of HHG |
| 4.3. Beam pointing stabilization |
| 4.4. Upgrade of optical relay system |
| 4.5. Observation of diffraction pattern of programmed(absorber) defect |
| 4.6. Reconstruction of absorber patterns from diffraction patterns |
| 5. Advanced HHG-CSM system |
| 6. Conclusion |
| ORCID i Ds |
（6）Biocompatible Multifunctional E-Skins with Excellent Self-Healing Ability Enabled by Clean and Scalable Fabrication（论文提纲范文）
| HIGHLIGHTS |
| 1 Introduction |
| 2 Experimental Section |
| 2.1 Materials |
| 2.2 Fabrication of the CNF/PVA Self?Healing Substrate |
| 2.3 Preparation of Self?Healing Electrodes |
| 2.4 Fabrication of Self?Healing Strain Sensors |
| 2.5 Fabrication of Self?Healing Temperature Sensors |
| 2.6 Fabrication of Self?Healing Humidity Sensors |
| 2.7 Characterization and Measurements |
| 3 Results and Discussion |
| 3.1 Moisture?Inspired Self?Healing Performance of the CNF/PVA Composite |
| 3.2 Conductivity and Self?Healing Properties of the Electrodes |
| 3.3 Strain Sensing Performance and Self?Healing Properties of the Strain Sensor |
| 3.4 Sensing Performances and Self?Healing Properties of the Temperature and Humidity Sensors |
| 3.5 Wearable and Self?Healing Multifunctional E?Skins |
| 4 Conclusion |
（7）Progress and perspectives in dielectric energy storage ceramics（论文提纲范文）
| 1 Introduction |
| 2 Key parameters for evaluating energy storage properties |
| 2.1 Energy storage density |
| 2.2 Energy storage efficiency |
| 2.3 Rapid charging–discharging characteristics |
| 2.4 Reliability of work |
| 3 Dielectric ceramics for energy storage capacitors |
| 3.1 Linear dielectric ceramics |
| 3.1.1 Ti O2 based ceramics |
| 3.1.2 Sr Ti O3 based ceramics |
| 3.2 Relaxor ferroelectric ceramics |
| 3.2.1 Pb-based relaxor ferroelectric ceramics |
| 3.2.2 Lead-free relaxor ferroelectric ceramics |
| (1) Bi0.5Na0.5TiO3 based ceramics |
| (2) BaTiO3-based ceramics |
| (3) BiFeO3-based ceramics |
| (4) K0.5Na0.5NbO3-based ceramics |
| 3.3 Antiferroelectric ceramics |
| 3.3.1 Pb-based antiferroelectric ceramics |
| (1) PbZrO3 |
| (2)(Pb,La)(Zr,Sn,Ti)O3 |
| 3.3.2 Lead-free antiferroelectric ceramics |
| (1) NaNbO3 |
| (2) AgNbO3 |
| 4 Conclusions and perspectives |
（10）Long-term flexible penetrating neural interfaces:materials, structures, and implantation（论文提纲范文）
| 1 Introduction |
| 2 Materials |
| 2.1 Polymer substrate for flexible neural interfaces |
| 2.2 Surface modification for long-term stability |
| 3 Structure |
| 3.1 Structure of flexible neural electrodes |
| 3.2 Multi-function neural interfaces |
| 4 Minimally invasive implantation |
| 4.1 Shuttle device |
| 4.2 Sacrifice layer |
| 4.3 Neural interfaces with variable rigidity |
| 5 Conclusion and outlook |
四、Development of 0.50μm CMOS Integrated Circuits Technology（论文参考文献）
- [1]Towards atomic and close-to-atomic scale manufacturing[J]. Fengzhou Fang,Nan Zhang,Dongming Guo,Kornel Ehmann,Benny Cheung,Kui Liu,Kazuya Yamamura. International Journal of Extreme Manufacturing, 2019(01)
- [2]At wavelength coherent scatterometry microscope using high-order harmonics for EUV mask inspection[J]. Yutaka Nagata,Tetsuo Harada,Takeo Watanabe,Hiroo Kinoshita,Katsumi Midorikawa. International Journal of Extreme Manufacturing, 2019(03)
- [3]A novel multifunctional electronic calibration kit integrated by MEMS SPDT switches[J]. 王姗姗,吴倩楠,高跃升,余建刚,曹钎龙,韩路路,李孟委. Chinese Physics B, 2021(11)
- [4]Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation[J]. Xiaorui Zhang,Huiping Zhu,Song'ang Peng,Guodong Xiong,Chaoyi Zhu,Xinnan Huang,Shurui Cao,Junjun Zhang,Yunpeng Yan,Yao Yao,Dayong Zhang,Jingyuan Shi,Lei Wang,Bo Li,Zhi Jin. Journal of Semiconductors, 2021(11)
- [5]A visibly transparent radiative cooling film with self-cleaning function produced by solution processing[J]. Guoliang Chen,Yaming Wang,Jun Qiu,Jianyun Cao,Yongchun Zou,Shuqi Wang,Jiahu Ouyang,Dechang Jia,Yu Zhou. Journal of Materials Science & Technology, 2021(31)
- [6]Biocompatible Multifunctional E-Skins with Excellent Self-Healing Ability Enabled by Clean and Scalable Fabrication[J]. Xiuzhu Lin,Fan Li,Yu Bing,Teng Fei,Sen Liu,Hongran Zhao,Tong Zhang. Nano-Micro Letters, 2021(12)
- [7]Progress and perspectives in dielectric energy storage ceramics[J]. Dongxu LI,Xiaojun ZENG,Zhipeng LI,Zong-Yang SHEN,Hua HAO,Wenqin LUO,Xingcai WANG,Fusheng SONG,Zhumei WANG,Yueming LI. Journal of Advanced Ceramics, 2021(04)
- [8]X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors[J]. Yu-Dong Li,Qing-Zhu Zhang,Fan-Yu Liu,Zhao-Hao Zhang,Feng-Yuan Zhang,Hong-Bin Zhao,Bo Li,Jiang Yan. Rare Metals, 2021(11)
- [9]Carbon materials:The burgeoning promise in electronics[J]. Yuting Zheng,Junjun Wei,Jinlong Liu,Liangxian Chen,Kang An,Xiaotong Zhang,Haitao Ye,Xiaoping Ouyang,Chengming Li. International Journal of Minerals Metallurgy and Materials, 2022
- [10]Long-term flexible penetrating neural interfaces:materials, structures, and implantation[J]. Chi GU,Jianjuan JIANG,Tiger H.TAO,Xiaoling WEI,Liuyang SUN. Science China（Information Sciences）, 2021
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